Giri Raj Joshi, Ph.D.
Giri Raj Joshi, Ph.D.Division Chair

The Applied Physics/Engineering Division has long been the premier gathering place for the global community of device physicists and engineers, material scientists, and surface analysts. The division provides a forum for research in nanotechnology, optoelectronics, magneto-optics, renewable energy generation and storage and thin film electronic devices in general. The research including material synthesis, device engineering, and characterization of thin film surfaces and interfaces is covered as well. Furthermore, the 2D materials such as graphene, and transition metal dichalcogenides and their application in optoelectronic devices, sensing, energy storage, quantum computing, etc. are discussed. In addition, the session will include bio-medical devices and applications related to high frequency communication in consumer electronics, EVs, and aviation. The division broadly includes the following topics:

  • Solar cells, batteries, thermoelectric devices and supercapacitors
  • Catalysis, fuel cells and water splitting
  • Bio-batteries, bio-solar cells and microbial fuel cells
  • Nanomaterial synthesis, 2D materials and corresponding devices
  • Light emitting diodes and transistors
  • Materials for quantum information science
  • Biomedical devices and wearables
  • Antenna, amplifiers, passive devices, etc. for high speed communication

Travel Grant Information for in-person USA Meeting

Travel Grant Information for in-person Nepal Meeting

Puspha Raj Pudasaini, Ph.D
Puspha Raj Pudasaini, Ph.DStaff Engineer, Technology Transfer TD Process Integration Lead Samsung Austin Semiconductor

Invited Speaker

Title: Advanced Semiconductor Technologies: Current Status and Future Outlook

The first part of the talk will discuss non-conventional thin film devices for flexible electronics applications. The presentation highlight includes high performance flexible transistors, direct write single and multi-layers metal dichalcogenides (TMDs) devices, ionic liquid gated single layer graphene devices and so on.

The second half of the talk will present the current state-of-art semiconductor technologies, including Fin-FET, Gate-All-Around (GAA) and Multi-bridge Channel (MBC) field effect transistors and more. The top foundries around the globe are competing to develop sub 20A technologies for high performance computing and artificial intelligence (AI) applications. I will share the current-status and future outlooks for these technologies.