The Applied Physics/Engineering Division has long been the premier gathering place for the global community of device physicists and engineers, material scientists, and surface analysts. The division provides a forum for research in nanotechnology, optoelectronics, magneto-optics, renewable energy generation and storage and thin film electronic devices in general. The research including material synthesis, device engineering, and characterization of thin film surfaces and interfaces is covered as well. Furthermore, the 2D materials such as graphene, and transition metal dichalcogenides and their application in optoelectronic devices, sensing, energy storage, quantum computing, etc. are discussed. In addition, the session will include bio-medical devices and applications related to high frequency communication in consumer electronics, EVs, and aviation. The division broadly includes the following topics:

  • Solar cells, batteries, thermoelectric devices and supercapacitors
  • Catalysis, fuel cells and water splitting
  • Bio-batteries, bio-solar cells and microbiol fuel cells
  • Nanomaterial synthesis, 2D materials and corresponding devices
  • Light emitting didoes and transistors
  • Materials for quantum information science
  • Biomedical devices and wearables
  • Antenna, amplifiers, passive devices, etc. for high speed communication

Invited Speakers

Sumit Paudyal, PhD
Sumit Paudyal, PhDAssociate Professor
Florida International University

Smart Power Distribution Grids: Modeling and Optimal Control

To be received

Rajendra Dahal, PhD
Rajendra Dahal, PhDSenior Process Development Engineer
Current Address: Intel Corporation, USA

Large Area High Efficiency Self-Powered Solid State Thermal Neutron Detectors

Rensselaer Polytechnic Institute, Troy, New York 12180-3522, USA

The development of high efficiency large area solid state neutron detectors is urgent for a wide range of civilian and defense applications. The applications of present neutron detector system are limited by the cost, size, weight, power requirements, and performance of the system. The self-powered or very low power consuming solid state neutron detector using highly matured silicon technology would provide significant benefits in terms of cost and volume, as well as allow for wafer level integration with charge preamplifier and readout electronics. We present here current research advances at RPI on the fabrication and characterization of large area solid state thermal neutron detector module with detection area up to 16 cm2. The detector utilizes three dimensional honeycomb silicon micro-structures with continuous p+-n junction diode filled with en-riched boron (99% of 10B) as a converter material for thermal neutron detection. A continuous p-n junction formed over the entire surface of the microstructure helps to achieve an extremely low leakage current density of ∼ 6.1×10−9A/cm2 at -1 V for a 2.5×2.5mm2 detector. This extremely low leakage current results in low electronic noise, which enables the fabrication of large-area detectors. An intrinsic thermal neutron detection efficiency of ∼26% for a 2.5×2.5mm2 detector element was obtained under zero bias voltage from Maxwellian spectra incident normally on the detector surfaces. Further, we measured the
efficiency of these detectors, using a single pre-amp, as a function of detection area and found that thermal neutron detection efficiency remains almost same up to 8cm2 and decreases by 20% when the device area increases from 8 to 16 cm2. These current results show the promise of achieving highly efficient large area solid state thermal neutron detectors with low gamma sensitivity at low cost using matured silicon processing technology for future applications.

Session Schedule

Please look below for detailed schedule.


Date/Time:
ET: 2022-07-15T19:00:00.000000000
Nepal: 2022-07-16T04:45:00.000000000

Abstract Number: ANPA2022_0109

Presenting Author: Rajendra Dahal (Invited)

Presenter's Affiliation: Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3522, USA

Title: Large Area High Efficiency Self-Powered Solid State Thermal Neutron Detectors

Show/Hide Abstract

The development of high efficiency large area solid state neutron detectors is urgent for a wide range of civilian and defense applications. The applications of present neutron detector system are limited by the cost, size, weight, power requirements, and performance of the system. The self-powered or very low power consuming solid state neutron detector using highly matured silicon technology would provide significant benefits in terms of cost and volume, as well as allow for wafer level integration with charge preamplifier and readout electronics. We present here current research advances at RPI on the fabrication and characterization of large area solid state thermal neutron detector module with detection area up to 16 cm2. The detector utilizes three dimensional honeycomb silicon micro-structures with continuous p+-n junction diode filled with en-riched boron (99% of 10B) as a converter material for thermal neutron detection. A continuous p-n junction formed over the entire surface of the microstructure helps to achieve an extremely low leakage current density of ~6.1�10-9 A/cm2 at -1 V for a 2.5�2.5 mm2 detector. This extremely low leakage current results in low electronic noise, which enables the fabrication of large-area detectors. An intrinsic thermal neutron detection efficiency of ~26% for a 2.5�2.5 mm2 detector element was obtained under zero bias voltage from Maxwellian spectra incident normally on the detector surfaces. Further, we measured the efficiency of these detectors, using a single pre-amp, as a function of detection area and found that thermal neutron detection efficiency remains almost same up to 8cm2 and decreases by 20% when the device area increases from 8 to 16 cm2. These current results show the promise of achieving highly efficient large area solid state thermal neutron detectors with low gamma sensitivity at low cost using matured silicon processing technology for future applications.

Date/Time:
ET: 2022-07-15T21:00:00.000000000
Nepal: 2022-07-16T06:45:00.000000000

Abstract Number: ANPA2022_0115

Presenting Author: Sumit Paudyal (Invited)

Presenter's Affiliation: Florida International University

Title: Smart Power Distribution Grids: Modeling and Optimal Control

Show/Hide Abstract

nan

Date/Time:
ET: 2022-07-15T21:30:00.000000000
Nepal: 2022-07-16T07:15:00.000000000

Abstract Number: ANPA2022_0116

Presenting Author: Jagannath Devkota

Presenter's Affiliation: National Energy Technology Laboratory, Pittsburgh, PA 15236

Title: Bottom-up synthesis and characterization of soft magnetic composites for power conversion application

Show/Hide Abstract

Emerging soft magnetic materials (SMMs) will play an increasingly important role in designing lightweight, small, and more efficient components in electrification of vehicles and grid modernization. However, state-of-the-art SMMs possess high power losses at elevated switching frequencies. These losses make them unsuitable for new applications which would utilize wide band gap semiconductors at switching frequencies in the kHz to MHz range. In addition, existing synthesis techniques of soft magnetic composites are expensive and are not flexible to engineer the materials chemistry. Here, we review the state-of-the-art soft magnetic composites for power conversion applications and their synthesis methods. Next, we report on a bottom-up synthesis method for SMMs that does not require an expensive grinding step. Also reported is the characterization of select soft magnetic composites which have potential for high-frequency power conversion application. Specifically, we present our latest progress on synthesis of select soft magnetic composites at scale, their compaction into cores, and core loss investigation. The proposed synthesis method is low cost and facilitates the engineering of materials composition for targeted application.

Date/Time:
ET: 2022-07-15T21:45:00.000000000
Nepal: 2022-07-16T07:30:00.000000000

Abstract Number: ANPA2022_0117

Presenting Author: Bivek Pokhrel

Presenter's Affiliation: University of Delaware

Title: Room temperature Magnetic sensing using 2D Magnet semicondcutor

Show/Hide Abstract

In this work, we utilize the internal valley degree of freedom in two-dimensional (2D) transition metal dichalcogenides (TMDC) to study the magnetic properties of van der Waals (vdW) ferromagnet. Semiconductor spintronics devices that rely on manipulating electronic spin for spin-based information processing and storage applications have seen significant progress over the past several decades. However, the advent of optically active 2D materials has enabled optically addressable electronic valley pseudospin degrees of freedom which have led to the concept of valleytronic devices with a wide range of applications in transport phenomenon, electrical, magnetic, and spin control. Specifically, valley manipulation has been demonstrated via a strong external magnetic field which is an essential component for creating valley-based logic gates. The recent rise of 2D vdW ferromagnets not only unlocks new methods to control such spin-valley degrees of freedom at room temperature but enables magnetic sensing via van der Waals heterostructure engineering. For example, the proximity effect can be harnessed for all-optical readout of the magnetic properties such as magnetic hysteresis, local magnetic field, domain dynamics, and the interlayer magnetic dipole, as the electronic valley transition follows the optical selection rule. Such heterostructure assembly also makes on-chip manipulation of spins and g-factor possible without the need for huge superconducting coils to generate an external magnetic field. In our work, we have assembled heterostructure of Fe3GeTe2(FGT) and mono/bi-layer MoS2 (TMDC) and study the valley Zeeman splitting and valley polarization via photoluminescence spectroscopy of MoS2/FGT heterostructure as a function of temperature. Such assembly will lead to all-optical room temperature sensing of van der Waals magnet via 2D valley degree of freedom and spin-valley polarization of 2D excitons via magnetic proximity effect of a van der Waals magnet.

Date/Time:
ET: 2022-07-16T12:00:00.000000000
Nepal: 2022-07-16T21:45:00.000000000

Abstract Number: ANPA2022_0146

Presenting Author: Ishwari Prasad Parajuli

Presenter's Affiliation: Old Dominion University/Jefferson Lab

Title: Magnetic field mapping of 1.3 GHz superconducting radiofrequency cavities

Show/Hide Abstract

Superconducting radio frequency (SRF) cavities are the fundamental building blocks of modern particle accelerators. Niobium is the material of choice to build such cavities. These cavities require a cryogenic cool-down to ~2 � 4 K for optimum performance minimizing RF losses on the inner cavity surface. However, temperature-independent residual losses in SRF cavities cannot be prevented entirely. One of the major sources of residual losses is trapped magnetic flux. The flux trapping mechanism depends on different factors, such as surface preparations and cool-down conditions. We have developed a diagnostic magnetic field scanning system (MFSS) using Hall probes and anisotropic magneto-resistance sensors to study the spatial distribution of trapped flux in 1.3 GHz single-cell cavities. The first result from this newly commissioned system revealed that the trapped flux on the cavity surface might redistribute with increasing RF power. The MFSS was also able to capture significant magnetic field enhancement at specific cavity locations after a quench.

Date/Time:
ET: 2022-07-16T15:00:00.000000000
Nepal: 2022-07-17T00:45:00.000000000

Abstract Number: ANPA2022_0151

Presenting Author: Trailokya Bhattarai

Presenter's Affiliation: UNC Charlotte

Title: The design and testing of a UV-C-LED for applications in microbial and viral deactivation

Show/Hide Abstract

Of the four categories of the UV range, namely: A, B, C, and vacuum; the UV-C is the most effective in deactivating microbes and viruses. From the literature, it is noted that the III-Nitride UV-C LEDs are highly efficient in deactivating pathogens. Thus, this paper reports on the design and testing of a III-Nitride UV-C LED system with a wavelength in the range of 250 nm < ? ? 300 nm. The design encompasses the use of LaserMOD to simulate an AlGaN-based LED to obtain wavelengths of ? ? 300 nm. Then procure a UV LED irradiation system which is commercially available in a spectrum around 275 nm. Now, the testing is being done, using the prototype for its effectiveness in destroying microbes� colonies. This study is enthralled by the effect of different parameters, like wavelengths, exposure time, and doses/irradiance of UV light on the microbial population. The effects on the DNA/RNA of the pathogen will be investigated before and after exposure to the UV light dose. Further, the QPCR/cell culture method for quantitative and qualitative analysis of the effectiveness of UV-irradiation on the deactivation of the microbes will be investigated. This will be followed by the design of five UV LEDs powered by solar cells, operating at different wavelengths to ascertain the most effective UV wavelengths in microbial disinfection.

Stay Tuned